Improvement in Nonlinear Characteristics of Zero Bias GaAsSb-based Backward Diodes

摘要

A high curvature coefficient (γ) of 49.4 V~(-1) was achieved at zero bias using p-GaAsSb/i-InAIAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V~(-1). Backward diodes with such a high γare applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (β_(v,opt)) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.