Radiation response analyzer of semiconductor dies

摘要

A novel technique of the on-site and real-time gamma ray radiation response analysis for semiconductor dies is proposed in the paper. Fundamental analysis of the die's radiation effects were demonstrated using the pulse current-voltage, the pulse capacitance-voltage and the pulse On-The-Fly measurements based on a probe station testing system which contains a lead container and a 10GBq 137Cs source. Radiation response of high-k/SiO2 stacks based gate oxides was investigated on site and in real time using the proposed analyzer.