SIMS sample preparation method for GOX analysis with small-size polysilicon patterns

摘要

Conventional die soak in hydrofluoric acid (HF) to prepare SIMS sample for gate oxide depth profiling analysis works well for large-size poly-Si pattern. However, for small-size poly-Si pattern (< 50µm), the HF soak results in abnormality in the SIMS depth profiling. A mechanical polish combined with HF soak was proposed to solve the problem.