Performance Enhancement of Solution-Processed Zn-Sn-O TFTs Using High-Pressure Annealing

摘要

In this paper, we investigated the effects of high-pressure annealing (HPA) in solution-processed zinc tin oxide (ZTO) thinfilm transistors (TFTs). The O_2-HPA-treated ZTO TFTs showed higher electrical performances in aspect of an on-current (I_(on)), saturation mobility (μ_(sat)) and bias stability. The O_2-HPA treatment could contribute to the elimination of defect states that originated from the oxygen vacancies in solution-processed metal-oxide films. The 350°C O_2-HPA-treated ZTO TFT showed μ_(sat), threshold voltage (V_(th)), subthreshold slope (S.S) and on/off ratio of 2.35 cm~2/V.s, 4.36 V, 0.58 V/dec., andl.16×10~7, respectively.