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Double-Dopant induced local structural changes and ionic conductivity of doped ceria system: As solid electrolytes for electrochemical devices

机译:掺杂二氧化碳系统的双掺杂局部结构变化和离子电导率:作为电化学装置的固体电解质

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Present study is focused on double-dopant effect on local restructuring, oxygen vacancy defect clustering and ionic conductivity of doped ceria system. As compared to single dopant double-doping gives more flexibility in tuning ionic conductivity of ceria. Singly and double-doped ceria system (viz Ce_(0.85)Sr_(0.15)O_(2-d) (SRDC), Ce_(0.85)Sm_(0.15)O_(2-d) (SDC) and Ce_(0.85)Sr_(0.075)Sm_(0.075)O_(2-d) (SSRDC)) has been discussed. Fluorite structure is confirmed by X-ray diffraction (XRD) and data is well fitted using Rietveld refinement by Full-Prof suite. The electrical properties of all gas tight dense pellets of doped ceria system were investigated by Impedance spectroscopy at intermediate operating temperature range. Double-doped ceria system exhibits one order higher conductivity then single once. To explore dopant induced local structural changes in ceria EXAFS and RAMAN spectroscopy study has been carried out at operating temperature. Formation of defect cluster at room temperature and dissociation of oxygen vacancies from defect cluster are revealed from the spectroscopy data. Local restructuring is closely associated with oxygen vacancies dissociation and activation energy and thus ionic conductivity.
机译:目前的研究专注于对掺杂掺杂掺杂的Ceria系统的局部重组,氧气空位缺陷聚类和离子电导率的双掺杂作用。与单掺杂剂双掺杂相比,在调整Ceria的离子电导率方面提供了更大的灵活性。单独和双掺杂的Ceria系统(Viz CE_(0.85)SR_(0.15)O_(2-D)(SRDC),CE_(0.85)SM_(0.15)O_(2-D)(SDC)和CE_(0.85)SR_ (0.075)SM_(0.075)O_(2-D)(SSRDC))已经讨论过。通过X射线衍射(XRD)确认萤石结构,通过全部专用套件使用Rietveld改进的数据充分拟合。在中间工作温度范围内,通过阻抗光谱研究了掺杂掺杂二氧化铈系统的所有气密密度粒度的电性能。双掺杂的Ceria系统表现出一个较高的电导率,然后单打一次。为了探索掺杂剂诱导的局部结构变化和拉曼光谱研究的工作温度。从光谱数据揭示了在室温下在室温下形成缺陷簇,并从光谱数据中透露了缺陷簇的氧空位的解离。局部重组与氧空位解离和活化能量密切相关,因此离子导电性。

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