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Micromagnetic simulation of static magnetic properties and tuning of anisotropy strength in two dimensional square antidot elements

机译:二维方形反对元件中静态磁性特性的微磁性模拟及各向异性强度的调谐

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We demonstrate the tailoring of anisotropy in magnetic nano-wire element using finite element method based micromagnetic simulation. We calculate the magentostatic properties for the structure by simulating hysteresis for these nano wire elements. The angular variation of remanence for the structures of different dimensions is used as the depiction to establish fourfold magnetic anisotropy. The change of anisotropy strength, which is the ratio of squareness of hysteresis loop in hard axis to easy axis, is demonstrated in this study which is one of the most important parameters to utilize these nanowire elements in multi state magnetic memory application.
机译:我们用基于有限元法的微观模拟证明了磁性纳米线元件中各向异性的剪裁。我们通过模拟这些纳米线元件的滞后来计算结构的神经静电性质。用于不同尺寸结构的剩磁的角度变化用作建立四倍磁各向异性的描述。各向异性强度的变化,这是在该研究中证明了硬轴滞后环的滞后环的比率,这是在多状态磁存储器应用中利用这些纳米线元件的最重要参数之一。

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