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Electrochromic performance of RF sputtered WO_3 thin films by Li ion intercalation and de-intercalation

机译:RF溅射WO_3薄膜的电致变色性能通过Li离子插入和去嵌入

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Tungsten oxide (WO_3) thin films were prepared by RF sputtering technique at room temperature and 300°C as substrate temperatures keeping the sputtering powers as 100, 150, 200 and 250 W. Films were subjected various characterization like structural by XRD, surface morphology by SEM, composition analysis by EDX, and optical band gap by UV-Vis-NIR spectrometer. Optimized films were used for iono-optical studies using Li ion as intercalation and de-intercalation. Electrochromic parameters were evolved and reported.
机译:通过RF溅射技术在室温下通过RF溅射技术制备氧化钨(WO_3)薄膜,如300℃,作为溅射功率保持溅射功率为100,150,200和250w。通过XRD,表面形态进行各种表征SEM,EDX的组成分析,用UV-Vis-NIR光谱仪和光带隙。优化的薄膜用于使用Li离子作为嵌入和去嵌入的离子光学研究。电致变色参数进行了进化和报道。

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