Evolution of a dense interlayer in a-SiN_x:H thin films under 100 MeV Ni~(7+) ion irradiation

摘要

The irradiation of sub-stoichiometric amorphous hydrogenated Silicon nitride (a-SiN_x:H) films with 100 MeV Ni~(7+) ions leads to a loss of hydrogen from these films and results in a compacted and denser films. It has been found that in addition to hydrogen, the nitrogen in the films tends to out-diffuse. However nitrogen is trapped close surface of a-SiN_x:H films. This is a result of self-limiting process of nitrogen trapping at the interface of the film and the ambient oxide layer. The continuous trapping of nitrogen leads to formation of a thin but dense layer which prevents the escape of nitrogen atoms from the films.