Current Density Characteristics In The Studies Of Electromagnetically Induced Transparency In A GaAs/GaAIAs Quantum Well

摘要

Confinement potential profiles due to conduction and valence bands are obtained in a Ga_(0.7)Al_(0.3)As/GaAs/ Ga_(0.7)Al_(0.3)As using variation formulism. The free electron distribution is carried out. The confined energy eigenvalue and its corresponding wavefunctions of charge carriers are found using self-consistent method. The confined energies with the geometrical confinement are computed. The potentials due to charges are done by Poisson equation. The effects of dielectric mismatch between the GaAs and GaAlAs semiconductors are introduced in the effective potential expressions. Transfer matrix method is employed to obtain the respective energies. The transmission probability is obtained for a constant well size. The high current density characteristics as a function of applied voltage is investigated. This investigation on the electromagnetically induced transparency in the photonic material will exploit in fabricating novel nonlinear optical devices in future.