首页> 外文会议>DAE Solid State Physics Symposium >Synthesis And Characterization of Electron Doped La_(0.85)Te_(0.15)MnO_3 Thin Film Grown on LaAlO_3 Substrate By Pulsed Laser Deposition Technique
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Synthesis And Characterization of Electron Doped La_(0.85)Te_(0.15)MnO_3 Thin Film Grown on LaAlO_3 Substrate By Pulsed Laser Deposition Technique

机译:通过脉冲激光沉积技术在LAALO_3基板上生长的电子掺杂LA_(0.85)TE_(0.85)TE_(0.85)TE_(0.15)MNO_3薄膜的合成与表征

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We report the structural, morphological and magneto-transport properties of electron doped La_(0.85)Te_(0.15)MnO_3 (LTMO) thin film grown on (001) LaAlO_3 single crystal substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) results confirm that the film has good crystalline quality, single phase, and c-axis orientation. The atomic force microscopy (AFM) results have revealed that the film consists of grains with the average size in a range of 20-30 nm and root-mean square (rms) roughness of 0.27nm. The resistivity versus temperature measurement exhibits an insulator to metal transition (MIT). We have noticed a huge value of magnetoresistance (~93%) close to MIT in presence of 8T field. X-ray photoemission spectroscopy confirms the electron doping and suggests that Te ions could be in the Te~(4+) state, while the Mn ions stay in the Mn~(2+) and Mn~(3+) valence state.
机译:我们通过脉冲激光沉积(PLD)报道了通过脉冲激光沉积(PLD)在(001)Laalo_3单晶基板上生长的电子掺杂La_(0.85)TE_(0.85)TE_(0.15)MNO_3(LTMO)薄膜的结构,形态和磁传输性能。 X射线衍射(XRD)结果证实,薄膜具有良好的晶体质量,单相和C轴取向。原子力显微镜(AFM)结果表明,薄膜由平均尺寸的晶粒组成,平均尺寸在20-30nm的范围内和0.27m的粗糙度粗糙度。电阻率与温度测量具有金属转换(MIT)的绝缘体。在8T领域的存在下,我们注意到磁阻的大量磁阻(〜93%)。 X射线照相扫描光谱证实了电子掺杂,并表明TE离子可以是TE〜(4+)状态,而Mn离子停留在Mn〜(2+)和Mn〜(3+)的价状态。

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