Highly conducting and wide band gap phosphorous doped nc-Si-QD/a-SiC films as n-type window layers for solar cells

摘要

Nano-crystalline silicon quantum dots (Si-QDs) embedded in the phosphorous doped amorphous silicon carbide (a-SiC) matrix has been successfully prepared at a low temperature (300 °C) by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD) system from (SiH_4 + CH_4)-plasma with PH_3 as the doping gas. The effect of PH_3 flow rate on structural, optical and electrical properties of the films has been studied. Phosphorous doped nc-Si-QD/a-SiC films with high optical band gap (>1.9 eV) and superior conductivity (～10~(-2) S cm~(-1)) are obtained, which could be appropriately used as n-type window layers for nc-Si solar cells in n-i-p configuration.