Determination of Trap Depth in nc-CdSe:Cu Thin Films Using Thermally Stimulated Current Measurements

摘要

Cooper doped nanocrystalline CdSe (nc-CdSe:Cu) thin films are prepared by thermal vaccum evaporation technique using the inert gas condensation method taking Ar as inert gas. TSC measurements are performed at three different heating rates 0.05 K/s, 0.066 K/s and 0.083 K/s for CdSe:Cu thin films. The noticeable shift in TSC peak towards higher temperatures is observed at higher heating rates. We have calculated trap depth using single trap analysis which is found to be approximately 0.5 eV.