Effects Of Gallium Alloy Content And The Geometrical Confinement On Effective Exciton g-factor In A III-V Semiconductor Quantum Dot

摘要

Effective exciton-g factor as functions of dot radius and Ga alloy content in a Ga_xIn_(1-x)As/GaAs quantum dot is computed. The computations are included with the effect of mass anisotropy and the non-parabolicity of the conduction band. The dependence of excitonic binding energy with respect to the dot radius is investigated for various composition of Ga alloy content.