Development of the low power and highly sensitive GaAs 2DEG DC linear/unipolar Hall Effect integrated circuits

摘要

GaAs-InGaAs-AlGaAs Hall sensor, current source, differential amplifier, comparator and source follower were integrated to form the first highly sensitive and low power (～18 mW) III-V DC unipolar Hall integrated circuit. This is a three terminal device which utilises 2 μm technology, offering at least ～50% higher switching sensitivity (～ 6 mT) compared to the existing commercial unipolar ICs. The design and development of the GaAs 2DEG DC unipolar Hall IC has been presented in this paper in details.