A comparison between Rad-Hard Standard Float Zone (FZ) and Magnetic Czochralski (MCz) Silicon Diodes in Radiotherapy Electron Beams Dosimetry

摘要

In this work we present the preliminary results obtained with a comparison between rad-hard FZ and MCz silicon diodes as on-line clinical electron beams dosimeters. The dynamic current response of the diodes under irradiation with electron beams within the energy range of 6 MeV up to 21 MeV was investigated. For all energies, data show good instantaneous repeatability of the diodes, characterized by coefficients of variation better than 2.8% and 2.5% to FZ and MCz, respectively. The dose-response curves of both diodes are quite linear with charge sensitivities better than 0.55 μC/Gy and 0.68 μC/Gy to FZ and MCz devices. These results show that MCz diode is more sensitive than FZ diode.