This work characterizes the analog performance of SOI n-MuGFETs with uniaxial and biaxial strain configuration with respect to the influence of the fin pitch distance. Improved intrinsic gain can be achieved on strained devices independent of the pitch, mainly due to the increased transconductance. Larger fin pitch in the uniaxial strain case showed a higher gain. However, for the biaxial devices the smaller pitch resulted in a larger gain thanks to the increased Early voltage.
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