Performance of Ultra-Low-Power SOI CMOS Diodes Operating at Low Temperatures

摘要

In this work the low temperature performance of ultra-low-power SOI CMOS diodes is presented. Experimental measurements performed in fabricated devices from 148K to 373K show that the temperature lowering can promote a significant leakage current reduction and increase of the forward current. Two-dimensional numerical simulations are used to extend the studied temperature range and analyze the doping concentration influence on the low temperature operation of these diodes.