An Analytical Model for the Non-Linearity of Triple Gate SOI MOSFETs

摘要

This work proposes a physically-based analytical model for the non-linearity of Triple-Gate MOSFETs. The model describes the second order harmonic distortion (HD2), usually the major nonlinearity source, as a function of the device dimensions, the series resistance, the low field mobility and the mobility degradation factor (θ). The model was applied to transistors of different channel lengths and fin widths and allowed to conclude that θ is the parameter which most contributes for the increase of HD2. The model was validated for both unstrained and strained FinFETs.