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Ultra Low Power 3-D Flow Meter in Monolithic SOI Technology

机译:单片SOI技术超低功率3-D流量计

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摘要

Silicon-on-Insulator technology, with unique properties such as harsh environment resistance and lower power consumption (1), is presented here as a platform for CMOS and MEMS co-integration. An original CMOS-compatible process has been developed for the design and the co-fabrication of out-of-plane movable cantilevers and ring oscillators circuits on the same chip. The measured transducer, by deflection of the out-of-plane MEMS component, shows until 10% variation of the frequency under different flow rates.
机译:绝缘体技术,具有独特的特性,如苛刻的环境抵抗和较低的功耗(1),作为CMOS和MEMS共同集成的平台。已经开发了原始的CMOS兼容的工艺,用于设计和共制的平面可移动悬臂和环形振荡器电路在同一芯片上的设计和共同制造。通过偏转外平面MEMS组分的测量换能器,显示在不同流速下频率的10%变化。

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