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Analysis of Polyethylene Latex Particle Removal Mechanism on SiO_2 Wafer Using Ultrasonic Spray Cleaning

机译:超声喷涂清洁分析SiO_2晶片上的聚乙烯胶乳颗粒去除机制

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In single-wafer cleaning of semiconductor chips and flat panel displays, various cleaning methods tailored to the process, such as two-fluid spray cleaning, high-pressure jet spray cleaning, ultrasonic cleaning spray cleaning, and scrub cleaning have been proposed and put to practical use. In this study, Polyethylene Latex (PSL) particles 0.2 μm in diameter and 1 μm in diameter were electro-sprayed on the SiO_2 The soil samples, and then cleaning efficiency was measured using two types of ultrasonic sprayers with frequencies of 1 MHz and 3 MHz confirmed. The soil samples are controlled for adhesion by deforming the PSL particles by heating the silicon wafer from 300K to 425K. From the experimental results, it was found that the is determined by factors other than the conventionally reported radiation flow in PSL particles.
机译:在半导体芯片和平板显示器的单晶片清洗中,已经提出了针对工艺定制的各种清洁方法,如两种流体喷射,高压喷射清洁,超声波清洗喷雾清洁和磨砂清洁实际使用。在该研究中,将聚乙烯胶乳(PSL)颗粒直径为0.2μm,直径为1μm,在SiO_2的土壤样品上被电动喷涂,然后使用两种类型的超声波喷雾器测量清洁效率,其中频率为1 MHz和3 MHz。确认的。通过将硅晶片从300K至425K加热来控制土壤样品以粘附。从实验结果中,发现该常规报告的PSL颗粒中的辐射流动以外的因素确定。

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