Study of Junction Performance in Mid-wavelength HgCdTe Photodiodes by laser beam induced current microscope

摘要

This paper reports on the disappearance of photosensitive area extension effect and the novel temperature dependence of junction performance for mid-wavelength HgCdTe detectors. The performances of junction under different temperatures are characterized by laser beam induced current (LBIC) microscope. The physical mechanism of temperature dependence on junction transformation is elaborated and demonstrated using numerical simulations. It is found that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation depended on temperature, and wider band gap compared with the long-wavelength HgCdTe photodiode may correlate with the disappearance of photosensitive area extension effect.