InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications

摘要

Optical and structural properties of InAs/InAsSb type-II superlattices (T2SL) and their feasibility for mid- and longwavelength infrared (MWIR and LWIR) photodetector applications are investigated. The InAs/InAsSb T2SL structures with a broad bandgap range covering 4 μm to 12 μm are grown by molecular beam epitaxy and characterized by highresolution x-ray diffraction and photoluminescence (PL) spectroscopy. All of the samples have excellent structural properties and strong PL signal intensities of the same order of magnitude, indicating that non-radiative recombination is not dominant and the material system is promising for high performance MWIR and LWIR detectors and multiband FPAs.