Electrical properties of VOx bolometer thin films prepared by metal-organic decomposition

摘要

Well axis-oriented V2O5 thin films were fabricated by MOD. V2O5 films were reduced to VOx films under a temperature of 530°C and pressures of 1.2–3.0 Pa in O2. VOx films indicated an abrupt transition around 55°C with a resistivity change of 3 orders and TCR of 2.1–2.2 %/K at 300 K.