An In0.23Ga0.77As-based planar Gunn diode operating in its fundamental transit-time mode of oscillation at 116 GHz with output power of −24 dBm is demonstrated. The diode has a pseudomorhpic HEMT-like structure grown on a semi-insulating GaAs substrate. The layer design was carried out using a two-dimensional drift-diffusion model. The realized devices show considerable potential as a source of millimeter-wave and even terahertz radiation.
展开▼
机译：A在 0.23 GA 0.77 以116GHz在116GHz的其基本传输时间振荡模式下运行的平面GUNN二极管，并进行了输出功率-24 dBm。二极管具有在半绝缘GaAs衬底上生长的伪晶状体HEMT的结构。使用二维漂移扩散模型进行层设计。实现的设备显示出相当大的潜力作为毫米波的来源，甚至是太赫兹辐射。
展开▼
