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Monte Carlo study of ballistic effects in high speed InAs-based quantum hot electron transistor

机译:Monte Carlo基于高速INAS的量子热电子晶体管的弹道作用研究

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摘要

By means of a Monte Carlo simulation, we have studied the collector transit region of an innovative InAs/AlSb quantum hot electron transistor constituted by a 100 nm-long InAs bulk region. This original vertical transport device has the potential to efficiently exploit the unrivalled transport properties of InAs to reach THz frequencies.
机译:通过蒙特卡罗模拟,我们研究了由100nm长的InAs散装区域构成的创新INAS / ALSB量子热电子晶体管的收集器传输区域。该原始垂直传输装置有可能有效利用INA的无与伦比的传输特性来实现频率。

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