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A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe

机译:高效的0.2 THz变容vCo,130nm SiGe中的-7 dBm输出功率为-7 dBm输出功率

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摘要

A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of 7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.
机译:提出了一种高效的电压控制振荡器(VCO),具有用于太赫兹(THz)频率的新变容二极管的频率调谐拓扑。调谐技术基于基于基础退化晶体管的发射极节点的可变电感。在130nm SiGe BICMOS工艺中制造,VCO在201.5GHz时实现了3.5%的调谐范围,输出功率为7.25dbm。 VCO消耗了30MW的直流电源,导致记录断电功率效率为0.6%。为了证明调谐技术的功能,已经实施了不同振荡频率的三种其他VCO原型,包括在222.7〜229GHz范围内运行。

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