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A Highly Efficient 0.2 THz Varactor-Less VCO with -7 dBm Output Power in 130nm SiGe

机译:在130nm SiGe上具有-7dBm输出功率的高效0.2THz变容二极管

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A highly efficient voltage controlled oscillator (VCO) with a new varactor-less-based frequency-tuning topology for terahertz (THz) frequencies is presented. The tuning technique is based on a variable inductance seen at the emitter node of a base degenerated transistor. Fabricated in a 130nm SiGe BiCMOS process, the VCO achieves a tuning range of 3.5% and output power of 7.25 dBm at 201.5GHz. The VCO consumes 30mW of DC power, resulting in a record-breaking power efficiency of 0.6%. To demonstrate the functionality of the tuning technique, three other VCO prototypes at different oscillation frequencies, including one operating at 222.7~229 GHz range, have been implemented.
机译:提出了一种高效的压控振荡器(VCO),它具有针对太赫兹(THz)频率的新型基于无变容二极管的频率调谐拓扑。调谐技术基于在基极退化晶体管的发射极节点处看到的可变电感。 VCO采用130nm SiGe BiCMOS工艺制造,在201.5GHz时可实现3.5%的调谐范围和7.25dBm的输出功率。 VCO消耗30mW的DC电源,导致创纪录的0.6%的电源效率。为了演示该调谐技术的功能,已经实现了其他三个在不同振荡频率下的VCO原型,其中包括一个在222.7〜229 GHz范围内工作的原型。

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