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Maximum Local Tissue Temperature Increase by Implanted Medical Devices Due to Electromagnetic Field Exposure

机译:由于电磁场曝光,通过植入的医疗器械的最大局部组织温度增加

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High frequency currents induced on electrically conducting implants represent a con-siderable risk for exposed persons in uncontrolled environments. Electrical fields which arise due to current discontinuities, e.g., at the tips of the implant leads can cause strong localized heating of the tissue the leads are embedded in. Heating of up to 2 is gen-erally considered as safe by the U. S. Food and Drug Administration [1]. During MR imaging of patients with metallic implants, the RF fields of the scanner cause currents on the implants which expose the patient to serious risk of exceeding this limit. Whereas this has been described in the recent literature [2], a generalized analysis covering a large range of implant dimensions and frequencies has not been performed. The objective of this study therefore is to evaluate the maximum increase of the tissue temperature for implants at the exposure at the levels of the reference levels [3] fora large frequency range.
机译:导电植入物上引起的高频电流代表了不受控制的环境中暴露人的危险风险。由于当前的不连续性而产生的电场,例如,在植入线的尖端上可能导致嵌入引线的组织的强烈局部加热。加热最多2是由美国食品和药物视为安全的基因管理[1]。在金属植入物患者的MR成像期间,扫描仪的RF场因植入物的电流使患者暴露于超过该限制的严重风险。然而,这已经在最近的文献[2]中描述,尚未执行覆盖大范围种植体尺寸和频率的广义分析。因此,本研究的目的是评估在参考水平的水平下植入物的组织温度的最大增加[3]大频率范围。

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