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The Evolution of Patterning Process Models in Computational Lithography

机译:计算光刻中图案化过程模型的演变

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Thirty five years have passed since the first lithography process models were presented, and since that time there has been remarkable progress in the predictive power, performance, and applicability of these models in addressing many different challenges within the semiconductor industry. The impact has been profound, and this paper will attempt to highlight some of the key contributions which have been made, particularly as patterning simulation has moved beyond the realm of process development to full chip production enablement. In addition, this paper will outline the new process simulation challenges which emerge as the industry approaches sub-0.25 k_(1) patterning. These challenges lie principally in driving towards ever improved accuracy for an expanding set of processes and failure modes, while maintaining or improving full chip data preparation cycle times.
机译:自第一个光刻工艺模型出现了三十五年,从那时起,这些模型在解决半导体行业内的许多不同挑战方面存在显着进展。影响已经深入了解,本文将突出突出所取得的一些关键贡献,特别是图案化模拟已超越流程开发领域,以至于全芯片生产支持。此外,本文将概述新的流程模拟挑战,该挑战在行业临近Sub-0.25 K_(1)图案中。这些挑战主要介绍促进扩展一组工艺和故障模式的准确性,同时保持或改善全芯片数据准备循环时间。

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