The band structure of Hg1−xCdxTe results in an electron avalanche photodiode (e-APD) that exhibits single carrier, deterministic, noiseless gain. Data and analysis on 5µm cutoff, Hg0.7Cd0.3Te e-APD gated-imaging arrays with sub-photon sensitivity will be presented.
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机译：HG 1-X / INF> CD X / INF> TE的带结构导致电子雪崩光电二极管（E-APD），其呈现单载波，确定性，无噪声增益。将呈现5μm截止的数据和分析，HG 0.7 CD 0.3 TE E-APD GEND-成像阵列，具有亚光子灵敏度的阵列。
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