Internal stress of the Sm-Fe thin films was investigated considering ion bombardment. The Sm-Fe thin films were deposited by DC magnetron sputtering process with various substrate bias voltage. The effect of ion bombardment on internal stress of Sm-Fe thin films was estimated by the ion bombardment parameter P_i. The ion bombardment parameter P_i increased with increasing negative substrate voltage. Internal stress of Sm-Fe thin films showed a larger compressive stress with increasing amount of the ion bombardment parameter P_i. The magnetostrictive susceptibility of Sm-Fe thin films was improved by increasing compressive stress. The magnetostrictive susceptibility of the Sm-Fe thin film was dependent on the P_i.
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