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A Radiation Tolerant Phase Locked Loop Design for Digital Electronics

机译:数字电子辐射锁相锁相环设计

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With decreasing feature sizes., lowered supply voltages and increasing operating frequencies, the radiation tolerance of digital circuits is becoming an increasingly important problem. Many radiation hardening techniques have been presented in the literature for combinational as well as sequential logic. However, the radiation tolerance of clock generation circuitry has received scant attention to date. Recently, it has been shown that in the deep submicron regime, the clock network contributes significantly to the chip level Soft Error Rate (SER). The on-chip Phase Locked Loop (PLL) is particularly vulnerable to radiation strikes. In this paper, we present a radiation hardened PLL design. Each of the components of this design - the voltage controlled oscillator (VCO), the phase frequency detector (PFD) and the loop filter are designed in a radiation tolerant manner. Whenever possible, the circuit elements used in our PLL exploit the fact that if a gate is implemented using only PMOS (NMOS) transistors then a radiation particle strike can result only in a logic 0 to 1 (1 to 0) flip. By separating the PMOS and NMOS devices, and splitting the gate output into two signals, extreme high levels of radiation tolerance are obtained. Our PLL is tested for radiation immunity for critical charge values up to 250fC. Our results demonstrate that over a large number of radiation strikes on a number of sensitive nodes in our design, the worst case jitter is just 18%. In the worst case, our PLL returns to the locked state in 16 cycles of the VCO clock, after a radiation strike.
机译:随着特征尺寸的降低。,降低电源电压和增加的工作频率,数字电路的辐射容差正成为一个越来越重要的问题。许多辐射硬化技术已经呈现在组合的文献中以及顺序逻辑中。然而,时钟生成电路的辐射容限接受了迄今为止的注意力。最近,已经表明,在深度亚微米制度中,时钟网络对芯片级软错误率(SER)有显着贡献。片上锁相环(PLL)特别容易受到辐射撞击。在本文中,我们提出了一种辐射硬化的PLL设计。该设计的每个组件 - 压控振荡器(VCO),相位频率检测器(PFD)和环路滤波器以辐射容忍的方式设计。尽可能,我们的PLL中使用的电路元件利用该事实:如果仅使用PMOS(NMOS)晶体管实现栅极,则辐射颗粒击击只能导致逻辑0到1(1至0)翻转。通过将PMOS和NMOS器件分离,将栅极输出分成两个信号,获得了极高的高水平的辐射容差。我们的PLL用于辐射免疫,对于高达250Fc的关键电荷值。我们的结果表明,在我们设计中的许多敏感节点上,最坏的情况下,在大量的辐射罢工中,最坏的情况下恰好是18%。在最坏的情况下,在辐射击球后,我们的PLL返回到VCO时钟的16个周期中的锁定状态。

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