Statistical simulation of resist at EUV and ArF

摘要

Requirements of resist modeling strategies for EUV and low-k1 ArF nanolithography continue to becomemore stringent. Resist designers are consistently faced with the task of reducing exposure dose and lineroughness while simultaneously improving exposure latitude, depth-of-focus and ultimate resolution.In this work, we briefly discuss a next-generation resist model for the prediction of statistical resistresponses such as line-edge roughness, line-width roughness and CD variability, as well as baselithographic responses such as exposure latitude. The model's parameterized fit to experimental data from astate-of-the art polymer-bound PAG resist irradiated at ArF and EUV will be shown. The probabilisticcomputation of acid generation at ArF and EUV will be discussed. The factors influencing thehypothesized primary cause of resist roughness, acid shot noise, are discussed.