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Current Sensor based on Nanocrystalline NiFe/Cu/NiFe Thin Film

机译:基于纳米晶体NiFe / Cu / NiFE薄膜的电流传感器

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The nanocrystalline NiFe/Cu/NiFe thin films were fabricated via a facile sputtering method in order to improve the current sensor performance. Further, the resulting thin films were characterized by means of X-ray diffraction, Field emission scanning electron microscopy, Atomic force microscopy and Hysteresis techniques for their structure, morphology and magnetic properties. In the present work NiFe/Cu/NiFe thin film based current sensor device length is varied and the influence of device length on current sensor performance and sensitivity were investigated. The length of device is varied from 2 to 8 mm and current sensor performance increases because of mean free path length goes on decreasing and electron may be reach the boundary of material and scattered. The highest sensitivity for the device is found to be 0.76 ΩOe~(-1).
机译:通过容易溅射法制造纳米晶体/ Cu / NiFe薄膜,以改善电流传感器性能。此外,通过X射线衍射,场发射扫描电子显微镜,原子力显微镜和滞后技术表征了所得的薄膜,用于其结构,形态和磁性。在本工作NiFe / Cu / NiFe薄膜的电流传感器装置长度变化,并研究了装置长度对电流传感器性能和灵敏度的影响。装置的长度在于2至8mm,并且由于平均自由路径长度而导致电流传感器性能增加,并且电子可以达到材料的边界并散射。发现设备的最高灵敏度为0.76Ωoe〜(-1)。

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