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Fabrication of symmetrical meandering NiFe/Cu/NiFe film sensors and study of the effects of field direction and film thickness on giant magnetoimpedance

机译:对称曲折形NiFe / Cu / NiFe薄膜传感器的制作以及场方向和薄膜厚度对巨磁阻抗的影响研究

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摘要

Sandwich NiFe/Cu/NiFe film sensors with symmetrical meandering structure are fabricated by Micro-Electro-Mechanical-System (MEMS) technology, the longitudinal, transverse, and perpendicular giant magnetoimpedance (GMI) effect have been investigated comprehensively. The correlation between film thickness and GMI effect are analyzed thoroughly. The experimental results show that the alternating current (AC) frequency of maximum GMI ratio decreases gradually with the increasing of magnetic layer thickness, but the conducting layer exhibits an opposite tendency. The NiFe and Cu layer both show a GMI ratio tendency from increasing to decreasing along with the increase of film thickness. It is observed the longitudinal, transverse and perpendicular GMI effect share a common characteristic: the AC frequency of maximum GMI ratio increases with the increase of external field intensity. However, there is a notable difference between them, it is demonstrated that the higher GMI ratio and sensitivity can be obtained in the longitudinal direction. The longitudinal GMI ratio reaches the peak value 191.2% at f_(AC) = 6.5 MHz under H_L = 17 Oe in six turns sample with the Cu and NiFe thickness of 6 and 7 μm, respectively.
机译:利用微机电系统(MEMS)技术制造了具有对称曲折结构的三明治式NiFe / Cu / NiFe薄膜传感器,并对其纵向,横向和垂直巨磁阻抗效应进行了全面研究。深入分析了膜厚与GMI效应之间的关系。实验结果表明,随着磁性层厚度的增加,最大GMI比的交流频率逐渐减小,而导电层却呈现相反的趋势。随着膜厚的增加,NiFe和Cu层均显示出GMI比从增加到减少的趋势。观察到纵向,横向和垂直的GMI效应具有一个共同的特征:最大GMI比的交流频率随外场强度的增加而增加。但是,它们之间存在显着差异,这表明在纵向方向上可以获得更高的GMI比和灵敏度。在G_L = 17 Oe的情况下,在六匝样品中,Cu和NiFe的厚度分别为6和7μm时,纵向GMI比在f_(AC)= 6.5 MHz时达到峰值191.2%。

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