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Dependence of the exchange bias on the thickness of antiferromagnetic layer in the trilayered NiFe/IrMn/NiFe thin-films

机译:交换偏压对三叶李建口/ IRMN / NIFE薄膜中的反铁磁层厚度的依赖性

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The influence of the antiferromagnetic layer thickness on the magnetic properties of the trilayered thin-film structures with the exchange bias phenomenon was studied in the temperature range from 100 up to 295 K. Dependences of the coercive force and exchange bias field on AF-layer thickness were analyzed for all structures with AF layer thickness from 2 nm up to 50 nm at room and low temperatures. The explanation in terms of the anisotropy and thermal energies competition was given for disclosure of an exchange bias for structures with 2 nm AF layer thickness at low temperatures.
机译:在100至295k的温度范围内研究了抗晶体层厚度对具有交换偏置现象的三层薄膜结构磁性的影响。矫顽力和交换偏置场对AF层厚度的依赖性在室温和低温下将AF层厚度的所有结构分析为所有结构,高达50nm。给出了各向异性和热能竞争方面的解释,用于披露在低温下具有2nm AF层厚度的结构的交换偏压。

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