Determination of Density and Young's Modulus of Atomic Layer Deposited Thin Films by Resonant Frequency Measurements of Optically Excited Nanocantilevers

摘要

We report on a methodology for simultaneous determination of the Young's modulus and density of ultrathin films from a resonance experiment. The approach is based on an interferrometric detection of the in-plane and out-of-plane resonant responses of an optically excited single crystal Si nano cantilever prior and after Atomic Layer Deposition (ALD) of a thin film. The frequencies shifts were measured at the same structure reducing sensitivity to scattering in geometric parameters and clamping compliances. Experimental results obtained for Al2O3 (alumina) and HfO2 (hafnia) were consistent with the model predictions and the data available in literature.