首页> 外国专利> Thin film bulk acoustic wave resonator, has edge structure arranged over edge area of upper electrode, and piezoelectric layer arranged between upper and lower electrodes, in which acoustic wave is excited with resonant frequency

Thin film bulk acoustic wave resonator, has edge structure arranged over edge area of upper electrode, and piezoelectric layer arranged between upper and lower electrodes, in which acoustic wave is excited with resonant frequency

机译:薄膜体声波谐振器,其边缘结构布置在上电极的边缘区域上,并且压电层布置在上电极和下电极之间,其中声波以谐振频率被激励

摘要

The resonator has an upper electrode (1), which represents a polygon with curved edges (11-14). An edge structure (5) made from acoustically dampening material is arranged over an edge area of the upper electrode. A lower electrode is arranged below the upper electrode, and a piezoelectric layer is arranged between the upper and lower electrodes, in which an acoustic wave is excited with a resonant frequency of the resonator.
机译:谐振器具有上电极(1),该上电极代表具有弯曲边缘的多边形(11-14)。由声学阻尼材料制成的边缘结构(5)布置在上电极的边缘区域上方。在上部电极的下方配置下部电极,在上部电极与下部电极之间配置有压电体层,在该压电体层中,以谐振器的谐振频率激励声波。

著录项

  • 公开/公告号DE102004053318A1

    专利类型

  • 公开/公告日2006-05-11

    原文格式PDF

  • 申请/专利权人 EPCOS AG;

    申请/专利号DE20041053318

  • 申请日2004-11-04

  • 分类号H03H9/17;H03H9/125;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:40

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