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Thin film bulk acoustic wave resonator, has edge structure arranged over edge area of upper electrode, and piezoelectric layer arranged between upper and lower electrodes, in which acoustic wave is excited with resonant frequency
Thin film bulk acoustic wave resonator, has edge structure arranged over edge area of upper electrode, and piezoelectric layer arranged between upper and lower electrodes, in which acoustic wave is excited with resonant frequency
The resonator has an upper electrode (1), which represents a polygon with curved edges (11-14). An edge structure (5) made from acoustically dampening material is arranged over an edge area of the upper electrode. A lower electrode is arranged below the upper electrode, and a piezoelectric layer is arranged between the upper and lower electrodes, in which an acoustic wave is excited with a resonant frequency of the resonator.
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