FABRICATION OF THREE-DIMENSIONAL NANO-PATTERNS BY INCLINED NANOIMPRINTING LITHOGRAPHY

摘要

We report a non-conventional nanofabrication approach, Inclined Nanoimprint Lithography (INIL), which can produce three-dimensional (3-D) nano-patterns of varying heights in a single imprinting step with the potential for low cost and high throughput. Such 3-D nano-patterns can be produced using soft lithography without the need for conventional nano-lithography of either the imprinting mold or the substrate, by exploiting the technique of anisotropic de-wetting. We demonstrate the INIL technique using a commercially available nanolithography resist, poly(methyl-alpha-chloroacrylate-co-alpha-methylstyrene), and demonstrate 3-D pattern transfer to silicon dioxide using reactive ion etching.