Influence of RF power density on the nanocrystallization of Ar diluted Si:H thin films deposited by PECVD

机译：RF功率密度对稀释Si稀释Si稀释Si稀释Si的纳米晶体的影响：H薄膜

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Hydrogenated silicon (Si:H) thin films were deposited at a selected argon diluting ratio under varied RF power density and the influence of it on nanocrystallization was studied by XRD, FTIR and Raman spectroscopy.

机译：在各种RF功率密度下，在各种RF功率密度下沉积氢化硅（Si：H）薄膜，通过XRD，FTIR和拉曼光谱研究其对纳米晶体的影响。

著录项

来源
《OptoElectronics and Communications Conference》|2009年||共2页
会议地点
作者
Zhi Li; Wei Li; Cai Haihong; Gong Yuguang; Qiu Yijiao; Jiang Yadong;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN91-53;
关键词
入库时间 2022-08-20 19:49:11

相似文献

外文文献
中文文献
专利

1. Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system [J] . Xu R., Li W., He J., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2013,第Null期

机译：PECVD系统中用氩气稀释a-Si1-XGe x：H薄膜的纳米晶化研究
2. Influence of film structure and composition on diffusion barrier perforinance of SiOx thin films deposited by PECVD [J] . Gruniger A, Bieder A, Sonnenfeld A, Surface & Coatings Technology . 2006,第14a15期

机译：膜结构和组成对PECVD沉积SiOx薄膜扩散势垒性能的影响
3. Influences of carbon content and power density on the PECVD grown a-Si1-x : C-x : H thin films [J] . Akaoglu B, Gulses A, Atilgan I, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2006,第1期

机译：碳含量和功率密度对PECVD生长的a-Si1-x：C-x：H薄膜的影响
4. Influence of RF power density on the nanocrystallization of Ar diluted Si:H thin films deposited by PECVD [C] . Zhi Li, Wei Li, Cai Haihong, OptoElectronics and Communications Conference . 2009

机译：RF功率密度对稀释Si稀释Si稀释Si稀释Si的纳米晶体的影响：H薄膜
5. Electromagnetic interference shielding effectiveness of metallic thin films deposited on high density polyethylene and styrene butadiene copolymer reinforced with carbon nanofibers. [D] . Garcia, Horus. 2012

机译：沉积在碳纳米纤维增强的高密度聚乙烯和丁苯共聚物上的金属薄膜的电磁干扰屏蔽效果。
6. A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD [O] . Yuwei Wang, Hong Liu, Wenzhong Shen 2018

机译：通过PECVD沉积低缺陷密度nc-Si：H薄膜的便捷有效方法
7. Effect of O2/Ar flow ratio and post-deposition annealing on the structural, optical and electrical characteristics of SrTiO3 thin films deposited by RF sputtering at room temperature [O] . Goldenberg, E., Bayrak, T., Ozgit-Akgun, C., 2015

机译：O 2 / Ar流量比和沉积后退火对室温下射频溅射沉积SrTiO 3 薄膜的结构，光学和电学特性的影响

Influence of RF power density on the nanocrystallization of Ar diluted Si:H thin films deposited by PECVD

摘要

著录项

相似文献

相关主题

期刊订阅