Atomistic simulations of the effect of implant parameters on Si damage

摘要

Device performance can be degraded by residual damage present after the processes of amorphization by ion implantation and the subsequent recrystallization. Atomistic simulations are used to analyze the effect of implant parameters, such as dose, dose rate and wafer temperature, on the amorphous layer depth and the amount of residual damage. The impact of the different beam pulse distributions of a single-wafer and a multi-wafer (batch) implanter on residual damage is also studied.