Study of Atomic Layer Deposited Zirconium Oxide Thin Films by Using Mono-Cyclopentadienyl Based Precursors

摘要

The electrical characterization of ZrO2-based MIS structures fabricated by ALD on SiO2/Si substrates with monocyclopentadienyls of zirconium, ZrCp(NMe2) 3, as precursors was carried out. These precursors combine the beneficial properties related to the high thermal stability of the Cp compounds with the high growth rate and tendency of forming high permittivity cubic or tetragonal ZrO2 phases of the alkylamido compounds. Interfacial state densities of annealed samples reached values as low as 1 x 1011 Cm-2 eV-1, and leakage current was essentially bulk driven, with similar values to those obtained when precursors contained two cyclopentadienyl groups. The hysteresis of C-V curves, as well as the amplitude of conductance and flat-band voltage transients had moderate values, indicating the good quality of the films.