首页> 外国专利> PRECURSOR FOR DEPOSITING ZINC OXIDE-BASED THIN FILM, METHOD OF FABICATING THEREOF AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME

PRECURSOR FOR DEPOSITING ZINC OXIDE-BASED THIN FILM, METHOD OF FABICATING THEREOF AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME

机译:用于沉积基于氧化锌的薄膜的前体,其制备方法和使用相同方法沉积基于氧化锌的薄膜的方法

摘要

PURPOSE: A precursor for zinc oxide thin film deposition, a manufacturing method thereof, and a zinc oxide thin film deposition method using the same are provided to deposit the pure zinc oxide thin film without impurities. CONSTITUTION: A precursor for zinc oxide thin film deposition is an organic zinc compound having a formula 1 or derivatives thereof. Formula 1 : R1CpZnR2 (R1 and R2 are the hydrogen or alkyl group (CnH2n+1). Cp is cyclopentadienyl.) The n of R1 alkanethiol is 1-3. The n of the R2 alkanethiol is 1-4. The R1 and the R2 are identical symmetrical compound or different asymmetric compounds.
机译:用途:提供用于氧化锌薄膜沉积的前驱体,其制造方法以及使用该前驱体的氧化锌薄膜沉积法以沉积纯净的氧化锌薄膜而无杂质。组成:用于氧化锌薄膜沉积的前体是具有式1的有机锌化合物或其衍生物。式1:R 1 CpZnR 2(R 1和R 2为氢或烷基(C n H 2n +1)。Cp为环戊二烯基。)R 1链烷硫醇的n为1-3。 R 2链烷硫醇的n为1-4。 R 1和R 2是相同的对称化合物或不同的不对称化合物。

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