Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET

摘要

The density gradient quantum correction to the conventional drift-diffusion simulation technique has become a well established method to include quantum mechanical effects without resorting to a full quantum transport solution. The results obtained from this method, however, can depend greatly on the values of certain parameters used, and it is usual to calibrate the simulation against more rigorous quantum transport simulations such as non-equilibrium Green's functions (NEGF). Here we present an analysis of the effect of varying fitting parameters within density gradient and compare the results to NEGF simulations for a nanowire transistor.