Improvement of the k.p Approach for Describing Silicon Quantum Dots

摘要

We present in this work a correction to the Effective Mass Approach based on atomistic calculations for studies on hole confinement in silicon quantum dots. The idea is to connect two different frameworks such as Tight-Binding and k.p in order to take advantage of the computational efficiency of the latter. Further, this work would enable to gain an insight into the causes of difference between both approaches.