Monte Carlo analysis of thermal effects in GaN HEMTs

摘要

By means of a semi-classical Monte Carlo simulator with a consistent self-heating model we have analyzed how the static DC characteristics of GaN HEMTs are modified with respect to the constant room temperature model. The main consequence of the heating of the devices is a decrease of the drain conductance, mainly when the dissipated power is high (high VDS and VGS). Regarding the dynamic SSEC parameters, both Cgs and gm decrease when increasing T, thus reducing the intrinsic cutoff frequency of the transistors.