GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices

摘要

III?? nitride based Quantum Wells (QWs) have been extensively studied as active buildings blocks for different electronic and optoelectronic devices. Several samples of GaN/AIN Axial Multi Quantum Well nanowires (MQW NWs) have been synthesized, leading to NWs with a MQW structure with GaN wells of different widths along the growth axis, 1.5, 2,3 and 4 nm. In this work structural and optical properties are studied by means of high resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) analysis respectively.