(S)TEM tomography of AlAs-GaAs coaxial Nanowires

摘要

(S) TEM tomography is used as a complementary tool to characterize AlAs-GaAs coaxial nanowires. These nanostructures have been grown on two different GaAs substrate orientations using molecular-beam epitaxy (MBE). The results show that quantum wells synthesized on nanowires grown on different substrate orientations present different morphology, which induces changes on their photoluminescence properties.