We present the first approach to a numerical simulator that extends the traditional resolution of the discrete Poisson and continuity equations, to solve a p-n ferromagnetic and degenerate junction. As it is degenerate, the carriers within the p-n junction can recombine through a direct tunnelling process from the valence band to the conduction band and viceversa. Ferromagnetism produces a spin split of the conduction band in n-type semiconductors and of the valence band in p-type semiconductors. The simulator evaluates the tunnelling asymmetry for an ideal junction with arbitrary spin polarisation on each side and computes how the current depends on the voltage across the junction. The obtained results predict that the strongest influence of the spin polarisation over the current value occurs in the negative resistance region, main characteristic of the tunnel diode.
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