GaInP/GaInAs/Ge triple junction solar cells for ultra high concentration

摘要

In this paper we characterize the first functional, lattice matched, GaInP/GaInAs/Ge triple junction solar cells grown and manufactured in our lab with an efficiency conversion of 31.5% at a concentration level of 1000 suns. This is our first approach for transferring the world record double junction solar cell, also developed in our group, into a Ge substrate. First experimental results are presented and the strategy to improve its efficiency is outlined.